SI3457CDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Weight :

19.986414mg

Vgs (Max) :

±20V

JESD-609 Code :

e3

Resistance :

74mOhm

Mount :

Surface Mount

ECCN Code :

EAR99

Published :

2015

Power Dissipation-Max :

2W Ta 3W Tc

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

5.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

40 ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-30V

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

6

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Rise Time :

80ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Pbfree Code :

yes

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

74m Ω @ 4.1A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Width :

1.65mm

Series :

TrenchFET®

Turn-Off Delay Time :

20 ns

Length :

3.05mm

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 15V

Contact Plating :

Tin

Number of Pins :

6

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Channels :

1

Transistor Application :

SWITCHING

Height :

1mm

FET Type :

P-Channel

REACH SVHC :

No SVHC

Power Dissipation :

2W

Threshold Voltage :

-1V

Operating Temperature :

-55°C~150°C TJ