SI3457CDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.05mm

Element Configuration :

Single

Drain-source On Resistance-Max :

0.074Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3W Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Turn On Delay Time :

40 ns

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2W

Lead Free :

Lead Free

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Weight :

19.986414mg

Pin Count :

6

Pbfree Code :

yes

Published :

2016

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 15V

Number of Channels :

1

Transistor Element Material :

SILICON

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

74m Ω @ 4.1A, 10V

Turn-Off Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rise Time :

80ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Factory Lead Time :

14 Weeks

Terminal Form :

Gull wing

Number of Terminations :

6

Height :

1mm

Mount :

Surface Mount

Fall Time (Typ) :

12 ns

JESD-609 Code :

e3

Width :

1.65mm

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

5.1A

Number of Pins :

6

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Matte Tin (Sn)