SI3457BDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Threshold Voltage :

-3V

Rise Time :

10ns

Vgs (Max) :

±20V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

-3 V

REACH SVHC :

Unknown

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.054Ohm

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

7 ns

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

22 ns

FET Type :

P-Channel

Mount :

Surface Mount

ECCN Code :

EAR99

Power Dissipation-Max :

1.14W Ta

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-3.7A

Power Dissipation :

1.14W

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

JESD-609 Code :

e3

Turn-Off Delay Time :

30 ns

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

6

Published :

2016

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Number of Elements :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

54m Ω @ 5A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V