SI3457BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Pbfree Code :

yes

Length :

3.0988mm

Number of Terminations :

6

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Number of Elements :

1

Dual Supply Voltage :

-30V

Fall Time (Typ) :

10 ns

Element Configuration :

Single

Power Dissipation :

2W

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

54m Ω @ 5A, 10V

Pin Count :

6

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

-3V

Rise Time :

10ns

Vgs (Max) :

±20V

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Radiation Hardening :

No

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Nominal Vgs :

-3 V

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

-3.7A

Lead Free :

Lead Free

Mount :

Surface Mount

Turn-Off Delay Time :

30 ns

Width :

1.7018mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

6

Height :

990.6μm

Turn On Delay Time :

7 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.14W Ta

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Resistance :

54mOhm

FET Type :

P-Channel