SI3456DDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max :

1.7W Ta 2.7W Tc

Pin Count :

6

Number of Channels :

1

Turn-Off Delay Time :

16 ns

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Length :

3.05mm

Power Dissipation :

1.7W

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Transistor Application :

SWITCHING

Turn On Delay Time :

12 ns

Drain Current-Max (Abs) (ID) :

5A

Terminal Finish :

Matte Tin (Sn)

Weight :

19.986414mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Terminal Form :

Gull wing

Pbfree Code :

yes

Mounting Type :

Surface Mount

Element Configuration :

Single

Height :

1mm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Number of Pins :

6

Rise Time :

13ns

Resistance :

40mOhm

Number of Elements :

1

Mount :

Surface Mount

Continuous Drain Current (ID) :

5A

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

40m Ω @ 5A, 10V

Fall Time (Typ) :

13 ns

Transistor Element Material :

SILICON

Width :

1.65mm

Published :

2016

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V