SI3456BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

6-TSOP

Continuous Drain Current (ID) :

6A

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Published :

2009

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Fall Time (Typ) :

15 ns

Width :

1.7018mm

Height :

990.6μm

Number of Elements :

1

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Radiation Hardening :

No

Power Dissipation :

1.1W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

Unknown

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

3V

Lead Free :

Lead Free

Turn-Off Delay Time :

25 ns

Power Dissipation-Max :

1.1W Ta

Drain to Source Resistance :

35mOhm

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

35mOhm @ 6A, 10V

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Element Configuration :

Single

Rds On Max :

35 mΩ

Length :

3.0988mm

Drain to Source Breakdown Voltage :

30V