SI3454CDV-T1-GE3

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Mfr.Part #
SI3454CDV-T1-GE3
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 30V 4.2A 6TSOP
Stock
17,429
In Stock :
17,429

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
3.8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
50m Ω @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C :
4.2A Tc
Drain-source On Resistance-Max :
0.05Ohm
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
Number of Terminations :
6
Mount :
Surface Mount
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Transistor Application :
SWITCHING
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Number of Pins :
6
Series :
TrenchFET®
Pin Count :
6
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Radiation Hardening :
No
Power Dissipation :
1.25W
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
Drain Current-Max (Abs) (ID) :
4.2A
Vgs(th) (Max) @ Id :
3V @ 250µA
Power Dissipation-Max :
1.25W Ta 1.5W Tc
FET Type :
N-Channel
Pbfree Code :
yes
Published :
2013
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
30V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Finish :
PURE MATTE TIN
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
305pF @ 15V
Datasheets
SI3454CDV-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI3454CDV-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Pins:6, Mounting Type:Surface Mount, SI3454CDV-T1-GE3 pinout, SI3454CDV-T1-GE3 datasheet PDF, SI3454CDV-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI3454CDV-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI3454CDV-T1-GE3


N-Channel Tape & Reel (TR) 50m Ω @ 3.8A, 10V ±20V 305pF @ 15V 10.6nC @ 10V SOT-23-6 Thin, TSOT-23-6

SI3454CDV-T1-GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 305pF @ 15V.This device conducts a continuous drain current (ID) of 3.8A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 4.2A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SI3454CDV-T1-GE3 Features


a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 30V voltage


SI3454CDV-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI3454CDV-T1-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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