SI3454CDV-T1-E3
- Mfr.Part #
- SI3454CDV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 4.2A 6TSOP
- Stock
- 24,998
- In Stock :
- 24,998
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 30V
- DS Breakdown Voltage-Min :
- 30V
- Turn-Off Delay Time :
- 8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 4.2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 12ns
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- FET Type :
- N-Channel
- Power Dissipation :
- 1.25W
- Fall Time (Typ) :
- 12 ns
- Drain-source On Resistance-Max :
- 0.05Ohm
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 1.25W Ta 1.5W Tc
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 3.8A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Tc
- Width :
- 1.65mm
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Turn On Delay Time :
- 4 ns
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchFET®
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 3.05mm
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Input Capacitance (Ciss) (Max) @ Vds :
- 305pF @ 15V
- Continuous Drain Current (ID) :
- 3.8A
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Pin Count :
- 6
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Datasheets
- SI3454CDV-T1-E3
N-Channel Tape & Reel (TR) 50m Ω @ 3.8A, 10V ±20V 305pF @ 15V 10.6nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
SI3454CDV-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 305pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 4.2A.As a result of its turn-off delay time, which is 8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI3454CDV-T1-E3 Features
a continuous drain current (ID) of 3.8A
the turn-off delay time is 8 ns
a 30V drain to source voltage (Vdss)
SI3454CDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3454CDV-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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