SI3454ADV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Power Dissipation-Max :

1.14W Ta

Fall Time (Typ) :

7 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

1.14W

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Mount :

Surface Mount

Number of Pins :

6

Published :

2009

Radiation Hardening :

No

Element Configuration :

Single

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Continuous Drain Current (ID) :

3.4A

ECCN Code :

EAR99

Turn-Off Delay Time :

20 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Pbfree Code :

yes

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Pin Count :

6

FET Type :

N-Channel

Terminal Form :

Gull wing

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.5A, 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA