SI3453DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G6

DS Breakdown Voltage-Min :

30V

Pin Count :

6

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

3.4A Tc

Continuous Drain Current (ID) :

-3.4A

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Fall Time (Typ) :

7 ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

165m Ω @ 2.5A, 10V

Turn On Delay Time :

4 ns

Rise Time :

9ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE