SI3451DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

115mOhm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.25W Ta 2.1W Tc

Rds On Max :

115 mΩ

Drain to Source Breakdown Voltage :

20V

Supplier Device Package :

6-TSOP

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

115mOhm @ 2.6A, 4.5V

FET Type :

P-Channel

Turn-Off Delay Time :

32 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Continuous Drain Current (ID) :

-2.8A

Vgs (Max) :

±12V

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Fall Time (Typ) :

30 ns

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Element Configuration :

Single

Power Dissipation :

1.25W

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance :

250pF

Max Operating Temperature :

150°C

Rise Time :

30ns

Gate to Source Voltage (Vgs) :

12V

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

20V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape and Reel (TR)