SI3447CDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±8V

Dual Supply Voltage :

12V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 8V

Nominal Vgs :

-1 V

Rise Time :

40ns

Rds On (Max) @ Id, Vgs :

36mOhm @ 6.3A, 4.5V

Supplier Device Package :

6-TSOP

FET Type :

P-Channel

Power Dissipation-Max :

2W Ta 3W Tc

Weight :

19.986414mg

Number of Channels :

1

Published :

2016

Input Capacitance :

910pF

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

Length :

3.05mm

Drain to Source Voltage (Vdss) :

12V

Factory Lead Time :

15 Weeks

Termination :

SMD/SMT

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Max Operating Temperature :

150°C

Height :

1mm

Threshold Voltage :

-1V

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 6V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Gate to Source Voltage (Vgs) :

8V

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

Continuous Drain Current (ID) :

-7.8A

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

7.8A Tc

Turn-Off Delay Time :

35 ns

Mount :

Surface Mount

Drain to Source Resistance :

36mOhm

Drain to Source Breakdown Voltage :

-12V

Width :

1.65mm

Rds On Max :

36 mΩ

Series :

TrenchFET®