SI3445DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

6

Vgs (Max) :

±8V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

Published :

2009

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

P-Channel

Number of Elements :

1

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Number of Terminations :

6

Mounting Type :

Surface Mount

Power Dissipation :

2W

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Turn On Delay Time :

20 ns

Series :

TrenchFET®

Power Dissipation-Max :

2W Ta

Continuous Drain Current (ID) :

-5.6A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Finish :

PURE MATTE TIN

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

60 ns

Turn-Off Delay Time :

110 ns

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

8V

Pulsed Drain Current-Max (IDM) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rise Time :

50ns

Number of Pins :

6

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

42m Ω @ 5.6A, 4.5V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.042Ohm