SI3445DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

-8V

Number of Terminations :

6

JESD-609 Code :

e3

Height :

1mm

Series :

TrenchFET®

Transistor Element Material :

SILICON

Number of Channels :

1

Number of Pins :

6

FET Type :

P-Channel

Terminal Finish :

Matte Tin (Sn)

Length :

3.05mm

Gate to Source Voltage (Vgs) :

8V

Drain to Source Breakdown Voltage :

-8V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

5.6A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

20 ns

REACH SVHC :

No SVHC

Vgs (Max) :

±8V

ECCN Code :

EAR99

Input Capacitance :

3.15nF

Published :

2013

Rise Time :

50ns

Weight :

19.986414mg

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

60 ns

Power Dissipation :

2W

Threshold Voltage :

-1V

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

42m Ω @ 5.6A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Pbfree Code :

yes

Power Dissipation-Max :

2W Ta

Terminal Position :

Dual

Turn-Off Delay Time :

110 ns

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

20A

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

42mOhm

Width :

1.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-1 V

Terminal Form :

Gull wing

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Element Configuration :

Single

Mount :

Surface Mount