SI3445ADV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation :

1.1W

Number of Terminations :

6

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

8V

Turn-Off Delay Time :

80 ns

FET Type :

P-Channel

Power Dissipation-Max :

1.1W Ta

Input Capacitance :

260pF

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Fall Time (Typ) :

60 ns

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Type :

Surface Mount

Rise Time :

40ns

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±8V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

42m Ω @ 5.8A, 4.5V

Resistance :

42mOhm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Terminal Position :

Dual

Mount :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Breakdown Voltage :

-8V

Number of Pins :

6

ECCN Code :

EAR99

Element Configuration :

Single

Turn On Delay Time :

20 ns