SI3443DVTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1079pF @ 10V

Published :

2004

Turn-Off Delay Time :

70 ns

Turn On Delay Time :

12 ns

Drain to Source Voltage (Vdss) :

20V

Nominal Vgs :

-1.2 V

Height :

990.6μm

Rds On Max :

65 mΩ

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Pins :

6

Input Capacitance :

1.079nF

Series :

HEXFET®

Fall Time (Typ) :

72 ns

Mount :

Surface Mount

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

Power Dissipation-Max :

2W Ta

Width :

1.7mm

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-20V

Drain to Source Resistance :

65mOhm

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

-4.4A

Dual Supply Voltage :

-20V

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

RoHS Status :

RoHS Compliant

Threshold Voltage :

-1.2V

Operating Temperature :

-55°C~150°C TJ

Length :

3.0988mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Radiation Hardening :

No

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rise Time :

33ns

Power Dissipation :

2W

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Vgs (Max) :

±12V

Supplier Device Package :

Micro6™(TSOP-6)

Rds On (Max) @ Id, Vgs :

65mOhm @ 4.4A, 4.5V

Resistance :

65mOhm