SI3443DV

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Package / Case :

SOT-23-6 Thin, TSOT-23-6

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs (Max) :

±8V

Gate to Source Voltage (Vgs) :

8V

Rise Time :

19ns

Transistor Application :

SWITCHING

Turn On Delay Time :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 10V

Number of Elements :

1

Turn-Off Delay Time :

26 ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

19 ns

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Continuous Drain Current (ID) :

-4A

Mounting Type :

Surface Mount

Weight :

36mg

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Series :

PowerTrench®

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-20V

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

1.6W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Number of Pins :

6

Radiation Hardening :

No

Terminal Form :

Gull wing

Element Configuration :

Single

Threshold Voltage :

-700mV

Rds On (Max) @ Id, Vgs :

65m Ω @ 4A, 4.5V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Lead Free :

Lead Free

Power Dissipation :

1.6W

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Drain Current-Max (Abs) (ID) :

4A

Terminal Position :

Dual