SI3443DV
- Mfr.Part #
- SI3443DV
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A SUPERSOT6
- Stock
- 9,000
- In Stock :
- 9,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 4A, 4.5V
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 10 Weeks
- Weight :
- 36mg
- Power Dissipation :
- 1.6W
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Vgs (Max) :
- ±8V
- Threshold Voltage :
- -700mV
- Drain to Source Voltage (Vdss) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 4A
- Fall Time (Typ) :
- 19 ns
- Turn-Off Delay Time :
- 26 ns
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 640pF @ 10V
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Continuous Drain Current (ID) :
- -4A
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Terminations :
- 6
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Turn On Delay Time :
- 11 ns
- Drain to Source Breakdown Voltage :
- -20V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 6
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 1.6W Ta
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Rise Time :
- 19ns
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Datasheets
- SI3443DV

P-Channel Cut Tape (CT) 65m Ω @ 4A, 4.5V ±8V 640pF @ 10V 10nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
SI3443DV Description
Fairchild's innovative PowerTrench process was specifically tuned to minimize on-state resistance while maintaining low gate charge for enhanced switching performance in this P-Channel 2.6V MOSFET. These devices were created to provide outstanding power dissipation in a tiny container for situations where larger products are not feasible.
SI3443DV Features
?-4 A, -20 V. = 0.065 £2 @ V* = 45 V RoS(ON| =0.100 Q@Vgs = -2.5V RoS(ON| =0.100 Q@Vgs = -2.5V
?Extremely fast switching speed.
?Low entry fee (7.2nC typical).
?Extremely low Rdsionj thanks to high-performance trench technology
?Small footprint (72 percent smaller than conventional SO-8) and low profile of the SuperSOPM-6 package (1mm thick).
SI3443DV Applications
?Turn on the load switch
?Protection against battery drain
?Effective power management
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