SI3443DDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Series :

TrenchFET®

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 8V

Time@Peak Reflow Temperature-Max (s) :

30

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate to Source Voltage (Vgs) :

12V

Current - Continuous Drain (Id) @ 25°C :

4A Ta 5.3A Tc

Input Capacitance (Ciss) (Max) @ Vds :

970pF @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Terminal Position :

Dual

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

-4A

Rds On (Max) @ Id, Vgs :

47m Ω @ 4.5A, 4.5V

Packaging :

Tape and Reel (TR)

Rise Time :

25ns

Mount :

Surface Mount

Number of Pins :

6

JEDEC-95 Code :

MO-193AA

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4A

Terminal Form :

Gull wing

Turn On Delay Time :

27 ns

Mounting Type :

Surface Mount

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

20V

Fall Time (Typ) :

18 ns

Turn-Off Delay Time :

43 ns

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

1.7W Ta 2.7W Tc

Drain-source On Resistance-Max :

0.047Ohm