SI3443CDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Pin Count :

6

Mounting Type :

Surface Mount

Height :

1mm

Published :

2013

Nominal Vgs :

-600 mV

Radiation Hardening :

No

Length :

3.05mm

Rise Time :

59ns

Element Configuration :

Single

Width :

1.65mm

Fall Time (Typ) :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 10V

Drain Current-Max (Abs) (ID) :

5.97A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 5V

Number of Channels :

1

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

5.97A Tc

Turn On Delay Time :

27 ns

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

30 ns

Power Dissipation-Max :

2W Ta 3.2W Tc

Resistance :

60mOhm

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.7A, 4.5V

Weight :

19.986414mg

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.2W

Mount :

Surface Mount

Threshold Voltage :

-600mV

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

-20V

Pbfree Code :

yes

Continuous Drain Current (ID) :

3.9A

Lead Free :

Lead Free

REACH SVHC :

Unknown

Number of Terminations :

6