SI3443CDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Fall Time (Typ) :

11 ns

Published :

2013

Terminal Position :

Dual

Radiation Hardening :

No

Number of Terminations :

6

Rise Time :

59ns

DS Breakdown Voltage-Min :

20V

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Height :

1mm

Gate to Source Voltage (Vgs) :

12V

Pin Count :

6

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Length :

3.05mm

Factory Lead Time :

14 Weeks

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

P-Channel

Transistor Application :

SWITCHING

Turn-Off Delay Time :

30 ns

Width :

1.65mm

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.7A, 4.5V

Weight :

19.986414mg

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

20A

Resistance :

60mOhm

Pbfree Code :

yes

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2W Ta 3.2W Tc

Series :

TrenchFET®

Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 5V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Lead Free :

Lead Free

Threshold Voltage :

-600mV

Nominal Vgs :

-600 mV

Continuous Drain Current (ID) :

3.9A

Turn On Delay Time :

27 ns

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4.7A

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

5.97A Tc

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)