SI3443BDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

25 ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Terminal Form :

Gull wing

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Power Dissipation-Max :

1.1W Ta

Factory Lead Time :

14 Weeks

Number of Channels :

1

Weight :

19.986414mg

Drain to Source Voltage (Vdss) :

20V

Published :

2016

Rise Time :

35ns

Element Configuration :

Single

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

3.6A

Pin Count :

6

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Turn On Delay Time :

22 ns

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.7A, 4.5V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

FET Type :

P-Channel

Number of Elements :

1

Mount :

Surface Mount