SI3443BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.1W

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Fall Time (Typ) :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Published :

2016

Rise Time :

35ns

Pin Count :

6

Turn-Off Delay Time :

45 ns

Pbfree Code :

yes

Lead Free :

Lead Free

Threshold Voltage :

-1.4V

Height :

990.6μm

Packaging :

Tape and Reel (TR)

Resistance :

60mOhm

Drain to Source Breakdown Voltage :

-20V

Radiation Hardening :

No

Number of Elements :

1

Power Dissipation-Max :

1.1W Ta

Factory Lead Time :

14 Weeks

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3.6A

Weight :

19.986414mg

Number of Channels :

1

Length :

3.05mm

Vgs(th) (Max) @ Id :

1.4V @ 250μA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.7A, 4.5V

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Contact Plating :

Tin

Nominal Vgs :

-1.4 V

Width :

1.65mm

Mount :

Surface Mount

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

22 ns