SI3442CDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

19.986414mg

Number of Pins :

6

Number of Channels :

1

Width :

1.7mm

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8A Tc

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

15 Weeks

Terminal Position :

Dual

Height :

1mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Radiation Hardening :

No

Terminal Form :

Gull wing

Turn-Off Delay Time :

17 ns

Power Dissipation :

1.7W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

335pF @ 10V

Threshold Voltage :

600mV

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

9 ns

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

1.7W Ta 2.7W Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.027Ohm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Mount :

Surface Mount

Vgs (Max) :

±12V

FET Type :

N-Channel

Series :

TrenchFET®

Length :

3.1mm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

8A

Published :

2013

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rds On (Max) @ Id, Vgs :

27m Ω @ 6.5A, 10V

Drain to Source Breakdown Voltage :

20V

Number of Terminations :

6