SI3442BDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Turn On Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Number of Elements :

1

Mounting Type :

Surface Mount

Turn-Off Delay Time :

20 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

57m Ω @ 4A, 4.5V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Number of Terminations :

6

Nominal Vgs :

1.8 V

Rise Time :

50ns

Drain-source On Resistance-Max :

0.057Ohm

Vgs (Max) :

±12V

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Terminal Position :

Dual

Mount :

Surface Mount

Pin Count :

6

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

4.2A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Fall Time (Typ) :

15 ns

Drain Current-Max (Abs) (ID) :

3A

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Threshold Voltage :

1.8V

Terminal Form :

Gull wing

Pbfree Code :

yes

Weight :

19.986414mg

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Pure Matte Tin (Sn)

DS Breakdown Voltage-Min :

20V

Number of Pins :

6

Power Dissipation :

860mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Power Dissipation-Max :

860mW Ta

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 10V

Number of Channels :

1