SI3441BDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

6

Number of Pins :

6

Transistor Element Material :

SILICON

Turn-Off Delay Time :

30 ns

Radiation Hardening :

No

Number of Elements :

1

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.3A, 4.5V

Series :

TrenchFET®

Turn On Delay Time :

15 ns

Time@Peak Reflow Temperature-Max (s) :

30

Length :

3.05mm

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Drain to Source Breakdown Voltage :

-20V

Terminal Position :

Dual

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.09Ohm

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

JESD-609 Code :

e3

Element Configuration :

Single

Rise Time :

55ns

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

2.45A Ta

Width :

1.65mm

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

Nominal Vgs :

-850 mV

Vgs (Max) :

±8V

Fall Time (Typ) :

40 ns

Threshold Voltage :

-850mV

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

860mW

Pbfree Code :

yes

Power Dissipation-Max :

860mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

PURE MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

850mV @ 250μA

Height :

1mm

Continuous Drain Current (ID) :

-2.45A