SI3441BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Height :

990.6μm

Series :

TrenchFET®

Turn-Off Delay Time :

30 ns

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2008

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

850mV @ 250μA

Pbfree Code :

yes

Threshold Voltage :

-850mV

Power Dissipation :

860mW

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

2.45A Ta

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

-850 mV

Mount :

Surface Mount

FET Type :

P-Channel

Power Dissipation-Max :

860mW Ta

Vgs (Max) :

±8V

REACH SVHC :

Unknown

Radiation Hardening :

No

Terminal Position :

Dual

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.3A, 4.5V

Element Configuration :

Single

Turn On Delay Time :

15 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

-20V

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-2.45A

Number of Terminations :

6

Length :

3.0988mm

Width :

3mm

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Breakdown Voltage :

20V

Rise Time :

55ns

Pin Count :

6

Fall Time (Typ) :

55 ns

Resistance :

130mOhm

Reverse Recovery Time :

50 ns

Termination :

SMD/SMT