SI3440DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

ECCN Code :

EAR99

Nominal Vgs :

4 V

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

JESD-609 Code :

e3

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2011

Continuous Drain Current (ID) :

1.5A

Drain to Source Voltage (Vdss) :

150V

Fall Time (Typ) :

15 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Weight :

19.986414mg

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Terminal Position :

Dual

Series :

TrenchFET®

Pin Count :

6

Threshold Voltage :

4V

Number of Terminations :

6

Radiation Hardening :

No

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

20 ns

FET Type :

N-Channel

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

10ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

375m Ω @ 1.5A, 10V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Number of Pins :

6

Power Dissipation :

1.14W

Resistance :

375mOhm

Mount :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.14W Ta

Turn On Delay Time :

8 ns

Transistor Element Material :

SILICON

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V