SI3440DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Element Configuration :

Single

Turn-Off Delay Time :

20 ns

Lead Free :

Lead Free

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.5A

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Vgs (Max) :

±20V

Width :

1.65mm

Rise Time :

10ns

Terminal Form :

Gull wing

Turn On Delay Time :

8 ns

Weight :

19.986414mg

ECCN Code :

EAR99

Number of Elements :

1

Series :

TrenchFET®

Threshold Voltage :

4V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Power Dissipation-Max :

1.14W Ta

Mount :

Surface Mount

Number of Pins :

6

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Nominal Vgs :

4 V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Power Dissipation :

1.14W

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Rds On (Max) @ Id, Vgs :

375m Ω @ 1.5A, 10V

JESD-609 Code :

e3

Published :

2013

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Fall Time (Typ) :

15 ns

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.05mm

FET Type :

N-Channel

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Channels :

1

Resistance :

375mOhm

REACH SVHC :

Unknown

Drain to Source Voltage (Vdss) :

150V

Vgs(th) (Max) @ Id :

4V @ 250µA