SI3438DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

6

Published :

2014

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 20V

ECCN Code :

EAR99

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

7.4A

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Fall Time (Typ) :

10 ns

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

5.5A

Pulsed Drain Current-Max (IDM) :

20A

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

35.5m Ω @ 5A, 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Lead Free :

Lead Free

Power Dissipation-Max :

2W Ta 3.5W Tc

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

Power Dissipation :

2W

Element Configuration :

Single

Number of Pins :

6

Turn-Off Delay Time :

16 ns

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

40V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Weight :

19.986414mg

Resistance :

35.5mOhm

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Series :

TrenchFET®

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

17ns