SI3438DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Terminal Form :

Gull wing

Number of Pins :

6

Pin Count :

6

Drain to Source Breakdown Voltage :

40V

Height :

1mm

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

35.5m Ω @ 5A, 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

7.4A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

20A

Turn On Delay Time :

16 ns

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2W

Length :

3.05mm

Number of Terminations :

6

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 20V

Continuous Drain Current (ID) :

5.5A

JESD-609 Code :

e3

Weight :

19.986414mg

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2W Ta 3.5W Tc

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Rise Time :

17ns

Drain-source On Resistance-Max :

0.0355Ohm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Width :

1.65mm

Element Configuration :

Single

Terminal Position :

Dual

FET Type :

N-Channel

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Fall Time (Typ) :

10 ns

Number of Elements :

1

Turn-Off Delay Time :

16 ns