SI3437DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Power Dissipation-Max :

2W Ta 3.2W Tc

Mount :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Rise Time :

29ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Termination :

SMD/SMT

Pbfree Code :

yes

Height :

1mm

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

5A

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Length :

3.05mm

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Nominal Vgs :

-4 V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 50V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

750m Ω @ 1.4A, 10V

Radiation Hardening :

No

Resistance :

750mOhm

Fall Time (Typ) :

14 ns

Max Output Current :

2A

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

23 ns

Width :

1.65mm

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Channels :

1

Factory Lead Time :

14 Weeks

Weight :

19.986414mg

Dual Supply Voltage :

-150V

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

-4V

Continuous Drain Current (ID) :

1.1A

Drain to Source Voltage (Vdss) :

150V

Lead Free :

Lead Free