SI3433CDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

22ns

Current - Continuous Drain (Id) @ 25°C :

6A Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 8V

Weight :

19.986414mg

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

38m Ω @ 5.2A, 4.5V

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Number of Channels :

1

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Turn-Off Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.038Ohm

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

8V

Length :

3.05mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain Current-Max (Abs) (ID) :

5.2A

Fall Time (Typ) :

22 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Height :

1mm

Terminal Position :

Dual

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Width :

1.65mm

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

-6A

Pin Count :

6

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

Vgs (Max) :

±8V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation :

1.6W

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Pbfree Code :

yes

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

6

Power Dissipation-Max :

3.3W Tc

Number of Elements :

1

Published :

2017

Vgs(th) (Max) @ Id :

1V @ 250μA