SI3433BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Threshold Voltage :

-450mV

Pin Count :

6

Power Dissipation :

1.1W

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

FET Type :

P-Channel

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

JESD-609 Code :

e3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-20V

Drain Current-Max (Abs) (ID) :

4.3A

Terminal Position :

Dual

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

45 ns

Rise Time :

45ns

Number of Pins :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

850mV @ 250μA

Nominal Vgs :

-450 mV

Vgs (Max) :

±8V

Resistance :

42mOhm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-5.6A

Turn-Off Delay Time :

80 ns

Rds On (Max) @ Id, Vgs :

42m Ω @ 5.6A, 4.5V

Element Configuration :

Single

Series :

TrenchFET®

Terminal Form :

Gull wing

Power Dissipation-Max :

1.1W Ta

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ