SI3430DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Turn-Off Delay Time :

16 ns

Width :

1.65mm

Power Dissipation-Max :

1.14W Ta

Rise Time :

11ns

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Nominal Vgs :

2 V

Resistance :

170mOhm

Height :

1mm

Number of Channels :

1

Number of Elements :

1

Pbfree Code :

yes

Fall Time (Typ) :

11 ns

Mount :

Surface Mount

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Weight :

19.986414mg

Published :

2017

Turn On Delay Time :

9 ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

170m Ω @ 2.4A, 10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Power Dissipation :

1.14W

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.8A

Mounting Type :

Surface Mount

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 10V

Length :

3.05mm

REACH SVHC :

Unknown

Pin Count :

6

Factory Lead Time :

14 Weeks