SI3429EDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G6

Vgs (Max) :

±8V

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

4.2W Tc

FET Type :

P-Channel

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Series :

TrenchFET®

Surface Mount :

yes

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

8A Ta 8A Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Resistance :

21mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

21m Ω @ 4A, 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

MO-193AA

Drain Current-Max (Abs) (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

4085pF @ 50V