SI3424DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mount :

Surface Mount

Reach Compliance Code :

Unknown

Number of Pins :

6

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.14W Ta

ECCN Code :

EAR99

Terminal Finish :

PURE MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Terminal Form :

Gull wing

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.028Ohm

Rds On (Max) @ Id, Vgs :

28m Ω @ 6.7A, 10V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

6

Power Dissipation :

1.14W

Number of Elements :

1

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

5A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Position :

Dual

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

5A

Drain to Source Breakdown Voltage :

30V

Series :

TrenchFET®