SI3424DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Max Operating Temperature :

150°C

Published :

2008

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Max Power Dissipation :

1.14W

Nominal Vgs :

800 mV

Threshold Voltage :

800mV

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

7 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

5A

Pbfree Code :

yes

Pin Count :

6

Power Dissipation :

1.14W

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

28m Ω @ 6.7A, 10V

REACH SVHC :

Unknown

Resistance :

28mOhm

Number of Elements :

1

Element Configuration :

Single

Terminal Form :

Gull wing

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Rise Time :

10ns

Number of Terminations :

6

Mounting Type :

Surface Mount

Number of Pins :

6

Turn-Off Delay Time :

20 ns

Drain Current-Max (Abs) (ID) :

5A

ECCN Code :

EAR99