SI3424CDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

8A Tc

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

3 ns

Fall Time (Typ) :

8 ns

Turn-Off Delay Time :

16 ns

ECCN Code :

EAR99

Number of Elements :

1

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

8A

Power Dissipation :

2W

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 15V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

8A

Vgs (Max) :

±20V

Lead Free :

Lead Free

Weight :

19.986414mg

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Published :

2015

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

26m Ω @ 7.2A, 10V

Peak Reflow Temperature (Cel) :

260

Pin Count :

5/6

Terminal Position :

Dual

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.6W Tc

Mount :

Surface Mount

Rise Time :

12ns

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Package / Case :

SOT-23-6 Thin, TSOT-23-6