SI3424BDV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.1W

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Published :

2012

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 10V

Power Dissipation-Max :

2.1W Ta 2.98W Tc

Max Operating Temperature :

150°C

Drain to Source Resistance :

28mOhm

Series :

TrenchFET®

Threshold Voltage :

3V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

8A

Input Capacitance :

735pF

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Vgs (Max) :

±20V

Nominal Vgs :

3 V

Input Capacitance (Ciss) (Max) @ Vds :

735pF @ 15V

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

18 ns

Number of Elements :

1

Number of Pins :

6

Rds On Max :

28 mΩ

Fall Time (Typ) :

12 ns

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Rise Time :

85ns

Turn-Off Delay Time :

17 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

28mOhm @ 7A, 10V

Supplier Device Package :

6-TSOP

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Element Configuration :

Single