SI3421DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Pins :

6

Fall Time (Typ) :

13 ns

Number of Elements :

1

Drain-source On Resistance-Max :

0.0192Ohm

Gate to Source Voltage (Vgs) :

-20V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

-8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

8A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

6

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

19.2m Ω @ 7A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Power Dissipation-Max :

2W Ta 4.2W Tc

Turn On Delay Time :

7 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-3V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Weight :

19.986414mg

ECCN Code :

EAR99

Series :

TrenchFET®

Rise Time :

9ns

DS Breakdown Voltage-Min :

30V

Base Part Number :

SI3421

Published :

2014

Mount :

Surface Mount

Turn-Off Delay Time :

55 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2580pF @ 15V

JEDEC-95 Code :

MO-193AA