SI3417DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Series :

TrenchFET®

Turn On Delay Time :

42 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2W Ta 4.2W Tc

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

8A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

6

Terminal Form :

Gull wing

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

25.2m Ω @ 7.3A, 10V

Number of Channels :

1

ECCN Code :

EAR99

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Published :

2014

JESD-609 Code :

e3

Rise Time :

35ns

Fall Time (Typ) :

16 ns

Factory Lead Time :

14 Weeks

FET Type :

P-Channel

Power Dissipation :

2W

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0252Ohm

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Element Configuration :

Single

Transistor Application :

SWITCHING

Turn-Off Delay Time :

40 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Weight :

19.986414mg

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ