SI3410DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

Pin Count :

6

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

30A

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Nominal Vgs :

3 V

Fall Time (Typ) :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Element Configuration :

Single

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 5A, 10V

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

8A

FET Type :

N-Channel

Number of Pins :

6

Number of Channels :

1

Power Dissipation :

2W

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1295pF @ 15V

Transistor Application :

SWITCHING

Weight :

19.986414mg

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

20 ns

Rise Time :

14ns

DS Breakdown Voltage-Min :

30V

REACH SVHC :

Unknown

Number of Elements :

1

Turn On Delay Time :

21 ns

Power Dissipation-Max :

2W Ta 4.1W Tc

Number of Terminations :

6

Published :

2014