SI3410DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

6-TSOP

Number of Channels :

1

Drain to Source Voltage (Vdss) :

30V

Rise Time :

8ns

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Length :

3.05mm

Max Operating Temperature :

150°C

Drain to Source Resistance :

19.5MOhm

Element Configuration :

Single

Threshold Voltage :

3V

Input Capacitance :

1.295nF

REACH SVHC :

Unknown

Vgs (Max) :

±20V

FET Type :

N-Channel

Height :

1mm

Current - Continuous Drain (Id) @ 25°C :

8A Tc

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

8A

Power Dissipation :

2W

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

3 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Turn On Delay Time :

10 ns

Width :

1.65mm

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation-Max :

2W Ta 4.1W Tc

Turn-Off Delay Time :

21 ns

Rds On Max :

19.5 mΩ

Rds On (Max) @ Id, Vgs :

19.5mOhm @ 5A, 10V

Mounting Type :

Surface Mount

Number of Pins :

6

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1295pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Weight :

19.986414mg

Published :

2015