SI3407DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Pbfree Code :

yes

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1670pF @ 10V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Resistance :

24mOhm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Nominal Vgs :

-1.5 V

Vgs (Max) :

±12V

Lead Free :

Lead Free

Number of Pins :

6

Radiation Hardening :

No

Threshold Voltage :

-1.5V

ECCN Code :

EAR99

Weight :

19.986414mg

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

24m Ω @ 7.5A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-8A

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Factory Lead Time :

14 Weeks

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Power Dissipation-Max :

4.2W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

7.5A

Power Dissipation :

2W

Pin Count :

6