SI3407DV-T1-E3
- Mfr.Part #
- SI3407DV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 8A 6TSOP
- Stock
- 6,529
- In Stock :
- 6,529
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Turn On Delay Time :
- 32 ns
- Rise Time :
- 62ns
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 24 mΩ
- Continuous Drain Current (ID) :
- 7.5A
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Rds On (Max) @ Id, Vgs :
- 24mOhm @ 7.5A, 4.5V
- Gate to Source Voltage (Vgs) :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- 6-TSOP
- Length :
- 3.05mm
- Power Dissipation-Max :
- 2W Ta 4.2W Tc
- Turn-Off Delay Time :
- 53 ns
- Drain to Source Resistance :
- 24mOhm
- Series :
- TrenchFET®
- Width :
- 1.65mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Fall Time (Typ) :
- 38 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 1.67nF
- Vgs (Max) :
- ±12V
- Number of Channels :
- 1
- Element Configuration :
- Single
- Published :
- 2012
- Number of Elements :
- 1
- Weight :
- 19.986414mg
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1670pF @ 10V
- Height :
- 1mm
- FET Type :
- P-Channel
- Power Dissipation :
- 2W
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Datasheets
- SI3407DV-T1-E3
P-Channel Tape & Reel (TR) 24mOhm @ 7.5A, 4.5V ±12V 1670pF @ 10V 63nC @ 10V 20V SOT-23-6 Thin, TSOT-23-6
SI3407DV-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1670pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 24mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 32 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
SI3407DV-T1-E3 Features
a continuous drain current (ID) of 7.5A
the turn-off delay time is 53 ns
single MOSFETs transistor is 24mOhm
a 20V drain to source voltage (Vdss)
SI3407DV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3407DV-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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