SI3129DV-T1-GE3
- Mfr.Part #
- SI3129DV-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- P-CHANNEL 80 V (D-S) MOSFET TSOP
- Stock
- 11,482
- In Stock :
- 11,482
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- FET Type :
- P-Channel
- Channel Type :
- P
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package Type :
- TSOP-6
- Channel Mode :
- Enhancement
- Mounting Type :
- Surface Mount
- Packaging :
- MouseReel
- Power Dissipation (Max) :
- 2W (Ta), 4.2W (Tc)
- Transistor Polarity :
- P-Channel
- FET Feature :
- -
- Number of Elements per Chip :
- 2
- Package :
- Digi-Reel?
- Manufacturer :
- Vishay
- Brand :
- Vishay / Siliconix
- Vgs (Max) :
- ±20V
- Continuous Drain Current Id :
- 5.4
- Transistor Type :
- TrenchFET Power MOSFET
- Supplier Device Package :
- 6-TSOP
- Rds On (Max) @ Id, Vgs :
- 82.7mOhm @ 3.8A, 10V
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Qualification :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 805 pF @ 40 V
- Power Dissipation :
- 4.2
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Subcategory :
- MOSFETs
- RoHS :
- Details
- Configuration :
- Single
- Rise Time :
- 8 ns
- Pin Count :
- 6
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Mounting Style :
- SMD/SMT
- Drain to Source Voltage (Vdss) :
- 80 V
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A (Ta), 5.4A (Tc)
- Tradename :
- TrenchFET
- Gate Charge (Qg) (Max) @ Vgs :
- 18 nC @ 10 V
- Series :
- TrenchFET?
- Datasheets
- SI3129DV-T1-GE3

P-Channel MouseReel 82.7mOhm @ 3.8A, 10V ±20V 805 pF @ 40 V 18 nC @ 10 V 80 V SOT-23-6 Thin, TSOT-23-6
SI3129DV-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 805 pF @ 40 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80 V.
SI3129DV-T1-GE3 Features
a 80 V drain to source voltage (Vdss)
SI3129DV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3129DV-T1-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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