SI1077X-T1-GE3
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- Mfr.Part #
- SI1077X-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET P-CH 20V SC89-6
- Stock
- 3,723
- In Stock ：
- 3,723
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Number of Terminations :
- 6
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Threshold Voltage :
- -1V
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 8V
- Package / Case :
- SOT-563, SOT-666
- Gate Charge (Qg) (Max) @ Vgs :
- 31.1nC @ 8V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 1.75A
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Pins :
- 6
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 1.8A, 4.5V
- DS Breakdown Voltage-Min :
- 20V
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.078Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2014
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Vgs (Max) :
- ±8V
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 330mW Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 965pF @ 10V
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- TrenchFET®
- Factory Lead Time :
- 14 Weeks
- FET Type :
- P-Channel
- Datasheets
- SI1077X-T1-GE3
P-Channel Tape & Reel (TR) 78m Ω @ 1.8A, 4.5V ±8V 965pF @ 10V 31.1nC @ 8V 20V SOT-563, SOT-666
SI1077X-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 965pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.75A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4.5V).
SI1077X-T1-GE3 Features
a continuous drain current (ID) of 1.75A
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI1077X-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1077X-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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