SI1073X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Element Configuration :

Single

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

0.98A

ECCN Code :

EAR99

Rise Time :

28ns

Rds On (Max) @ Id, Vgs :

173m Ω @ 980mA, 10V

Gate Charge (Qg) (Max) @ Vgs :

9.45nC @ 10V

FET Type :

P-Channel

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

-980mA

Number of Terminations :

6

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

SOT-563, SOT-666

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

28 ns

Number of Pins :

6

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

265pF @ 15V

Contact Plating :

Tin

Turn-Off Delay Time :

28 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Vgs (Max) :

±20V

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

26 ns

Resistance :

173mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Pin Count :

6

Transistor Application :

SWITCHING

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

236mW

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Flat

Power Dissipation-Max :

236mW Ta