SI1072X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

236mW Ta

Turn-Off Delay Time :

9 ns

Package / Case :

SOT-563, SOT-666

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Pins :

6

Drain-source On Resistance-Max :

0.093Ohm

Pin Count :

6

Published :

2015

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

30V

Series :

TrenchFET®

Vgs (Max) :

±20V

Pbfree Code :

yes

Mount :

Surface Mount

Number of Terminations :

6

JESD-609 Code :

e3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 15V

Rds On (Max) @ Id, Vgs :

93m Ω @ 1.3A, 10V

Element Configuration :

Single

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

31 ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rise Time :

31ns

Continuous Drain Current (ID) :

1.3A

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V